K1813
Features
- Low ON resistance.
- Ultrahigh-speed switching.
- Converters.
N-Channel Silicon MOSFET
2SK1813
High-Speed Switching Applications
Package Dimensions unit:mm 2089
[2SK1813]
10.2 4.5 1.3
11.5 1.6 0.9
11.0 8.8
0.8 0.4
Specifications
123 2.55 2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220MF
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
Junction Temperature Storage Temperature
Tj Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Ratings 100 ±20 30 120 1.65 70 150
- 55 to +150
Unit V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
VDSS ID=1m A,...
