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C4579 - 2SC4579

Features

  • High breakdown voltage.
  • Small Cob.
  • Wide ASO.
  • High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4579] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC.

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Ordering number:EN3243 NPN Triple Diffused Planar Silicon Transistor 2SC4579 900V/20mA Switching Applications Features · High breakdown voltage. · Small Cob. · Wide ASO. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4579] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg 2.
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