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C4411 - 2SC4411

Features

  • High fT (fT=1.2GHz typ).
  • High breakdown voltage (VCBO=100V, VCEO=80V).
  • Large current (IC=500mA).
  • Small reverse transfer capacitance (Cre=3.8pF/ VCB=30V).
  • Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4411] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 1.2 18.0 5.6 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collecto.

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Other Datasheets by SANYO (now Panasonic)

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C4412 2SC4412
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Full PDF Text Transcription

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Ordering number:EN3790 PNP Epitaxial Planar Silicon Transistor 2SC4411 Ultrahigh-Definition CRT Display Video Output Applications Applications · Wide-band amplifiers. Features · High fT (fT=1.2GHz typ). · High breakdown voltage (VCBO=100V, VCEO=80V). · Large current (IC=500mA). · Small reverse transfer capacitance (Cre=3.8pF/ VCB=30V). · Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4411] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 1.2 18.0 5.6 2.7 14.0 0.
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