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B903 - 2SB903

Key Features

  • Low collector-to-emitter saturation voltage : VCE(sat)=(.
  • )0.5V (PNP), 0.4V (NPN) max.
  • Large current capacity. Package Dimensions unit:mm 2010C [2SB903/2SD1212] ( ) : 2SB903 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C.

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Part Number Description
B904 2SB904

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:990C PNP/NPN Epitaxial Planar Silicon Transistors 2SB903/2SD1212 30V/12A High-Speed Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching applications. Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.5V (PNP), 0.4V (NPN) max. · Large current capacity.