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B1325 - PNP / NPN Epitaxial Planar Transistors

Features

  • Low saturation voltage.
  • Contains diode between collector and emitter.
  • Contains bias resistance between base and emitter.
  • Large current capacitance.
  • Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit : mm 2038A [2SB1325 / 2SD1999] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SB1325 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN3175A 2SB1325 / 2SD1999 PNP / NPN Epitaxial Planar Transistors 2SB1325 / 2SD1999 Compact Motor Driver Applications Features • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between base and emitter. • Large current capacitance. • Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit : mm 2038A [2SB1325 / 2SD1999] 4.5 1.6 1.5 1.0 2.5 4.
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