Adoption of FBET process. Package Dimensions
unit:mm 2018A
[2SA1580/2SC4104]
( ) : 2SA1580
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions.
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Ordering number:EN3172
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1580/2SC4104
High-Definition CRT Display Applications
Features
· High fT. · Small reverse transfer capacitance.
· Adoption of FBET process.