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25FV101T LE25FV101T

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Description

omPreliminary Specifications CMOS LSI LE25FV101T t4U.c1M (128k words × 8bits) Serial Flash EEPROM taShee.
Device Operation The LE25FV101T is a 128K x 8 CMOS sector Uerase, byte programmable serial Flash EEPROM.

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Datasheet Specifications

Part number
25FV101T
Manufacturer
Sanyo
File Size
99.93 KB
Datasheet
25FV101T_Sanyo.pdf
Description
LE25FV101T

Features

* CMOS Flash EEPROM Technology aSingle 3.3-Volt Read and Write Operations . DSector Erase Capability: 256 Bytes per sector wOperating Frequency: 10MHz wLow Power Consumption w Active Current (Read): 25 mA (Max. ) High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Sel

Applications

* the LE25FV101T is woffered with a guaranteed sector write endurance of Commands are used to initiate the memory operation functions of the device. Commands are written to the command register through serial input (SI). The addresses and data of Commands are latched to be used to operate functions

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