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C3995 - 2SC3995

Key Features

  • High speed (tf=100ns typ).
  • High reliability (adoption of HVP process).
  • High breakdown voltage (VCBO=1500V).
  • Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3995] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C.

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Full PDF Text Transcription (Reference)

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Ordering number:EN2508B NPN Triple Diffused Planar Silicon Transistor 2SC3995 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (adoption of HVP process). · High breakdown voltage (VCBO=1500V). · Adoption of MBIT process.