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LE28FV4001M - 4MEG (52488 x 8 Bits) Flash Memory

Sanyo Semicon Device

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Datasheet Details

Part number	LE28FV4001M
Manufacturer	Sanyo Semicon Device
File Size	230.16 KB
Description	4MEG (52488 x 8 Bits) Flash Memory
Datasheet	LE28FV4001M_SanyoSemiconDevice.pdf

LE28FV4001M Product details

Features

Highly reliable 2 layer polysilicon CMOS flash EEPROM process.
Read and write operations using a 3.3 V single-voltage power supply.
High-speed access: 200 and 250 ns.
Low power.
Operating (read): 10 mA (maximum).
Standby: 20 µA (maximum).
Highly reliable read write.
Number of sector write cycles: 104 cycles.
Data retention: 10 years.
Address and data latches.
Sector erase function: 256 bytes per se.

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Published: Mar 22, 2005 |