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LE28F4001M - 4 MEG (524288 words x 8 bits) Flash Memory

Sanyo Semicon Device

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Datasheet Details

Part number	LE28F4001M
Manufacturer	Sanyo Semicon Device
File Size	219.23 KB
Description	4 MEG (524288 words x 8 bits) Flash Memory
Datasheet	LE28F4001M_SanyoSemiconDevice.pdf

LE28F4001M Product details

Features

Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process.
Read and write operation from a 5 V single-voltage power supply.
Sector erase function: 256 bytes per sector.
Fast access time: 150/200 ns.
Low power.
Operating current (read): 25 mA (maximum).
Standby current: 20 µA (maximum).
Highly reliable read and write operations.
Sector write cycles: 104 cycles.
Data retention time: 10 y.

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Other Datasheets by Sanyo Semicon Device

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LE28F4001CTS-12 - 4M-Bit (512k 8) Flash EEPROM
LE28F4001R - 4 MEG (524288 words x 8 bits) Flash Memory
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LE28F4001R-20 - 4 MEG (524288 words x 8 bits) Flash Memory

Published: Mar 22, 2005 |