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LE28CV1001T-12 - 1MEG (131072 words x 8 bits) Flash Memory

Sanyo Semicon Device

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Datasheet Details

Part number	LE28CV1001T-12
Manufacturer	Sanyo Semicon Device
File Size	276.77 KB
Description	1MEG (131072 words x 8 bits) Flash Memory
Datasheet	LE28CV1001T-12_SanyoSemiconDevice.pdf

LE28CV1001T-12 Product details

Features

Highly reliable 2-layer polysilicon CMOS flash EEPROM process.
Read and write operations using a 5 V single-voltage power supply.
Fast access time: 120 and 150 ns.
Low power dissipation.
Operating current (read): 12 mA (maximum).
Standby current: 15 µA (maximum).
Highly reliable read/write.
Erase/write cycles: 104/103 cycles.
Data retention time: 10 years.
Address and data latches.
Fast page rewrite.

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Published: Mar 22, 2005 |