FW114 - P-Channel Silicon MOS FET

Product Overview

Sanyo Semicon Device

Part number	FW114
Manufacturer	Sanyo Semicon Device
File Size	44.17 KB
Description	P-Channel Silicon MOS FET
Datasheet	FW114 Datasheet
Additional preview pages of the FW114 datasheet.

Low ON resistance.
2.5V drive. Package Dimensions unit:mm 2129 [FW114] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.595 1.27 0.43 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2×0.8mm) 1un.

📁 Similar Datasheet

FW100 - 96 Watt AC Adapter (ETC)
FW101 - SCATTERED LIGHT DUST MEASURING DEVICES (SICK)
FW101Ex - SCATTERED LIGHT DUST MEASURING DEVICES (SICK)
FW10A - Fusible Power Resistors (BOURNS)
FW10G - FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
FW156-TL-E - Dual P-Channel 60V MOSFET (VBsemi)
FW1600010 - CRYSTAL (PSE Technology)
FW168-TL-E - Dual P-Channel MOSFET (VBsemi)

Other Datasheets by Sanyo Semicon Device

Published: Mar 23, 2005 |