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ECH8306 - P-Channel Silicon MOSFET

Features

  • General-Purpose Switching Device.

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www.DataSheet4U.com Ordering number : ENA0302 ECH8306 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8306 Features • • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --100 ± 20 --2 --12 1.
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