DBG250G - Diffused Junction Silicon Diode

Product Overview

Sanyo Semicon Device

Part number	DBG250G
Manufacturer	Sanyo Semicon Device
File Size	61.19 KB
Description	Diffused Junction Silicon Diode
Datasheet	DBG250G Datasheet
Additional preview pages of the DBG250G datasheet.

Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=25A. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM Tj Tstg Vdis TOR Terminals.

📁 Similar Datasheet

Other Datasheets by Sanyo Semicon Device

Published: Oct 4, 2007 |