D1887 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

High speed (tf=100ns).
High breakdown voltage (VCBO=1500V).
High reliability (adoption of HVP process). 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 5.45 5.

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Sanyo Semicon Device D1887-like datasheet

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