C5296 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	C5296
Manufacturer	Sanyo Semicon Device
File Size	154.59 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	C5296_SanyoSemiconDevice.pdf

High speed : tf=100ns typ.
High breakdown voltage : VCBO=1500V.
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5296] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse).

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Published: Jul 22, 2007 |