A2210 - 2SA2210

Sanyo Semicon Device

Datasheet Details

Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings --50 -.

📁 A2210 Similar Datasheet

A2211 - CLASS AB 1.25W DIFFERENTIAL AUDIO POWER AMPLIFIER (AiT Semiconductor)
A2212 - 1.2 WATT AUDIO POWER AMPLIFIER (AiT Semiconductor)
A2214ZGS-AMT - SMD LED (Kingbright)
A22 - Pushbutton Switch (OMRON)
A220 - High-speed diode (NXP)
A2201 - PNP Epitaxial Planar SIlicon Transistor (Sanyo)
A2203 - 1.1 WATT AUDIO POWER AMPLIFIER (AiT Semiconductor)
A220Z1-001 - LCD (Chi Mei)

Other Datasheets by Sanyo Semicon Device

Published: Oct 4, 2011 |