3LP02M - P-Channel Silicon MOSFET

Sanyo Semicon Device

Datasheet Details

Low ON resistance.
Ultrahigh-speed switching.
2.5V drive. Package Dimensions unit:mm 2158 [3LP02M] 0.425 0.15 3 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Sou.

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Published: Oct 1, 2007 |