3LN02M - Ultrahigh-Speed Switching Applications

Sanyo Semicon Device

Datasheet Details

Part number	3LN02M
Manufacturer	Sanyo Semicon Device
File Size	70.84 KB
Description	Ultrahigh-Speed Switching Applications
Datasheet	3LN02M_SanyoSemiconDevice.pdf

Low ON resistance.
Ultrahigh-speed switching.
2.5V drive. Package Dimensions unit:mm 2158 [3LN02M] 0.425 0.15 3 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Sou.

📁 3LN02M Similar Datasheet

Other Datasheets by Sanyo Semicon Device

Published: Oct 1, 2007 |