2SK222 - N-Channel Junction Silicon FET

Sanyo Semicon Device

Datasheet Details

Part number	2SK222
Manufacturer	Sanyo Semicon Device
File Size	80.20 KB
Description	N-Channel Junction Silicon FET
Datasheet	2SK222_SanyoSemiconDevice.pdf

Ultralow noise figure.
Large yfs.
Low gate leakage current. Package Dimensions unit:mm 2019B [2SK222] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 0.44 Specifications 123 1.3 1.3 1 : Source 2 : Gate 3 : Drain SANYO : NP JEDEC : TO-92 EIAJ : SC-43 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG PD Tj Tstg Conditions Ratin.

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Published: Mar 30, 2005 |