2SK2010 - N-Channel Silicon MOSFET

Sanyo Semicon Device

Datasheet Details

Low ON resistance.
Ultrahigh-speed switching.
Low-voltage drive.
Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK2010] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature.

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Published: Mar 30, 2005 |