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2SD1801 - PNP/NPN Epitaxial Planar Silicon Transistors

Features

  • Adoption of FBET, MBIT processes.
  • Large current capacitance and wide ASO.
  • Low collector-to-emitter saturation voltage.
  • Fast switching speed.
  • Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller Specifications ( ): 2SB1201 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP.

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Full PDF Text Transcription

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Ordering number : EN2112C 2SB1201/2SD1801 SANYO Semiconductors DATA SHEET 2SB1201/2SD1801 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller Specifications ( ): 2SB1201 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings (--)60 (--)50 (--)6 (--)2 (--)4 Unit V V V A A
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