2SD1651C - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SD1651C
Manufacturer	Sanyo Semicon Device
File Size	211.92 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SD1651C_SanyoSemiconDevice.pdf

Package Dimensions unit : mm 2174A [2SD1651C] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pul.

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Published: Aug 2, 2009 |