2SD1236L - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SD1236L
Manufacturer	Sanyo Semicon Device
File Size	174.90 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SD1236L_SanyoSemiconDevice.pdf

Low-saturation collector-to-emitter voltage : VCE(sat)=.
0.5V (PNP), 0.4V (NPN) max.
High current capacity. Package Dimensions unit:mm 2010C [2SB920L/2SD1236L] ( ) : 2SB920L Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrica.

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Published: Apr 3, 2005 |