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2SD1212 - PNP/NPN Transistors

Sanyo Semicon Device

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Datasheet Details

Part number	2SD1212
Manufacturer	Sanyo Semicon Device
File Size	118.20 KB
Description	PNP/NPN Transistors
Datasheet	2SD1212_SanyoSemiconDevice.pdf

2SD1212 Product details

Features

Low collector-to-emitter saturation voltage : VCE(sat)=(.
)0.5V (PNP), 0.4V (NPN) max.
Large current capacity. Package Dimensions unit:mm 2010C [2SB903/2SD1212] ( ) : 2SB903 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C.

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Published: Apr 3, 2005 |