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2SC5947 - NPN Triple Diffused Planar Silicon Transistor

Features

  • Package Dimensions unit : mm 2069C [2SC5947] 0.8 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 10.2 4.5 1.3 9.9 1.5max 8.8 3.0 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Col.

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www.DataSheet4U.com Ordering number : ENN7787 2SC5947 NPN Triple Diffused Planar Silicon Transistor 2SC5947 Switching Regulator Applications Features • • • • • Package Dimensions unit : mm 2069C [2SC5947] 0.8 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 10.2 4.5 1.3 9.9 1.5max 8.8 3.0 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP PC Tj Tstg PW≤300µs, Duty cycle≤10% Tc=25°C Conditions 2.55 2.
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