2SC5639 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC5639
Manufacturer	Sanyo Semicon Device
File Size	70.83 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC5639_SanyoSemiconDevice.pdf

High speed (tf=100ns typ).
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process. Package Dimensions unit:mm 2174 [2SC5639] 16.0 5.0 3.4 5.6 3.1 0.8 22.0 21.0 4.0 2.8 2.0 0.7 1 2 5.45 3.5 3 20.4 0.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter www. DataSheet4U. com 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions 0.8 2.1 Ratings.

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Published: Jul 11, 2007 |