2SC5444 - NPN TRANSISTOR

Sanyo Semicon Device

Datasheet Details

High speed (tf=100ns typ).
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5444] 20.0 3.3 5.0 26.0 2.0 3.4 2.0 1.0 20.7 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tempera.

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Published: Apr 3, 2005 |