2SC5305LS - NPN TRANSISTOR

Sanyo Semicon Device

Datasheet Details

Part number	2SC5305LS
Manufacturer	Sanyo Semicon Device
File Size	42.40 KB
Description	NPN TRANSISTOR
Datasheet	2SC5305LS_SanyoSemiconDevice.pdf

High breakdown voltage (VCBO=1200V).
High reliability (Adoption of HVP process).
Adoption of MBIT process. Package Dimensions unit:mm 2079D [2SC5305] 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature.

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Published: Apr 3, 2005 |