2SC4449 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC4449
Manufacturer	Sanyo Semicon Device
File Size	75.82 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC4449_SanyoSemiconDevice.pdf

High breakdown voltage.
Small reverse transfer capacitance and excellent high frequency characteristic.
Excellent DC current gain.
Adoption of FBET process. Package Dimensions unit:mm 2003B [2SC4449] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Tempe.

📁 2SC4449 Similar Datasheet

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |