2SC4435 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC4435
Manufacturer	Sanyo Semicon Device
File Size	90.68 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC4435_SanyoSemiconDevice.pdf

Fast switching speed (tf=300ns max).
High brocking voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC4435] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC I.

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Published: Mar 22, 2005 |