2SC4188 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC4188
Manufacturer	Sanyo Semicon Device
File Size	155.98 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC4188_SanyoSemiconDevice.pdf

High breakdown voltage : VCEO≥200V.
Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.3pF typ.
Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4188] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collecor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Diss.

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Published: Mar 22, 2005 |