2SC4169 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC4169
Manufacturer	Sanyo Semicon Device
File Size	34.53 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC4169_SanyoSemiconDevice.pdf

On-chip Zener diode of 60±10V between collector and base.
Uniformity in collector-to-base voltage.
High DC current gain : hFE=1000 min (VCE=5V, IC=500mA).
Wide ASO.
High inductive load handling capability : Es/b=15mJ (min). 6.0 3.0 14.0 8.5 [2SC4169] 6.0 5.0 4.7 0.5 0.6 0.5 0.5 Specifications 123 1.45 1.45 1 : Emitter 2 : Collector 3 : Base SANYO : MP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitte.

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Published: Mar 22, 2005 |