2SC3457 - NPN Silicon Transistor

Sanyo Semicon Device

Datasheet Details

High breakdown voltage and high reliability.
Fast switching speed (tf : 0.1µs typ).
Wide ASO.
Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC3457] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature.

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Published: Mar 22, 2005 |