2SC3069 - NPN Transistor

Sanyo Semicon Device

Datasheet Details

High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SC3069] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO.

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Published: Mar 22, 2005 |