2SC3042 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3042
Manufacturer	Sanyo Semicon Device
File Size	123.11 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC3042_SanyoSemiconDevice.pdf

High breakdown voltage (VCBO≥500V).
Fast switching speed.
Wide ASO. Package Dimensions unit:mm 2022A [2SC3042] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Tc=25˚C PW≤300µs, Duty Cycle≤10% 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Conditions Ratings 500 400.

📁 2SC3042 Similar Datasheet

2SC3041 - NPN Transistor (INCHANGE)
2SC3043 - SILICON POWER TRANSISTOR (SavantIC)
2SC3046 - Silicon NPN Transistor (Fujitsu)
2SC3047 - SILICON POWER TRANSISTOR (SavantIC)
2SC3001 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
2SC3006 - Silicon NPN epitaxial planer type Transistor (Toshiba Semiconductor)
2SC3007 - Silicon NPN Transistor (Toshiba)
2SC3011 - Silicon NPN epitaxial planer Transistor (Toshiba Semiconductor)

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |