2SC2911 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SC2911
Manufacturer	Sanyo Semicon Device
File Size	41.40 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC2911_SanyoSemiconDevice.pdf

Adoption of FBET process.
High breakdown voltage.
Good linearity of hFE and small Cob.
Fast switching speed. Package Dimensions unit:mm 2009B [2SA1209/2SC2911] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1209 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dis.

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Published: Mar 22, 2005 |