2SB1406 - PNP Epitaxial Planar Silicon Darlington Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SB1406
Manufacturer	Sanyo Semicon Device
File Size	68.72 KB
Description	PNP Epitaxial Planar Silicon Darlington Transistor
Datasheet	2SB1406_SanyoSemiconDevice.pdf

Darlington connection.
High DC current gain.
Large current capacity. Package Dimensions unit:mm 2064 [2SB1406] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector.

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Published: Mar 22, 2005 |