2SB1396 - PNP Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SB1396
Manufacturer	Sanyo Semicon Device
File Size	87.60 KB
Description	PNP Epitaxial Planar Silicon Transistor
Datasheet	2SB1396_SanyoSemiconDevice.pdf

Adoption of FBET, MBIT processes.
Large current capacity.
Low collector-to-emitter saturation voltage.
Small size making it easy to provide high-density, small-sized hybrid ICs. Package Dimensions unit:mm 2038 [2SB1396] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEB.

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Published: Mar 22, 2005 |