2SA2196 - PNP / NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SA2196
Manufacturer	Sanyo Semicon Device
File Size	71.30 KB
Description	PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet	2SA2196_SanyoSemiconDevice.pdf

Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2196 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEB.

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Published: Oct 1, 2007 |