2SA2013 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SA2013
Manufacturer	Sanyo Semicon Device
File Size	50.18 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SA2013_SanyoSemiconDevice.pdf

Adoption of FBET and MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end products.
High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2013 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector.

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Published: Mar 22, 2005 |