2SA1697 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SA1697
Manufacturer	Sanyo Semicon Device
File Size	107.24 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SA1697_SanyoSemiconDevice.pdf

High fT : fT=300MHz.
High breakdown voltage : VCEO=200V min.
Small reverse transfer capacitance and excellent high frequency characteristic : Cre=2.2pF/NPN, 2.7 pF/PNP.
Adoption of FBET process.
Micaless type. Package Dimensions unit:mm 2041 [2SA1697/2SC4474] ( ) : 2SA1697 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collec.

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Published: Mar 22, 2005 |