2SA1436 - PNP Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SA1436
Manufacturer	Sanyo Semicon Device
File Size	74.44 KB
Description	PNP Epitaxial Planar Silicon Transistor
Datasheet	2SA1436_SanyoSemiconDevice.pdf

Adoption of MBIT process.
High DC current gain (hFE=500 to 1200).
Large current capacity.
Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SA1436] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperatu.

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Published: Mar 22, 2005 |