2SA1381 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SA1381
Manufacturer	Sanyo Semicon Device
File Size	156.42 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SA1381_SanyoSemiconDevice.pdf

Package Dimensions unit:mm 2009A [2SA1381/2SC3503].
High breakdown voltage : VCEO≥300V.
Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V.
Adoption of MBIT process. JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature S.

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Published: Mar 22, 2005 |