2SA1370 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SA1370
Manufacturer	Sanyo Semicon Device
File Size	155.37 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SA1370_SanyoSemiconDevice.pdf

High breakdown voltage : VCEO≥200V.
Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP).
Adoption of FBET process. ( ) : 2SA1370 EIAJ : SC-51 SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VE.

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Published: Mar 22, 2005 |