2SA1208 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SA1208
Manufacturer	Sanyo Semicon Device
File Size	63.89 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SA1208_SanyoSemiconDevice.pdf

Adoption of FBET process.
High breakdown voltage.
Excellent linearity of hFE and small Cob.
Fast swtching speed. Package Dimensions unit:mm 2006B [2SA1208/2SC2910] 6.0 5.0 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SA1208 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage.

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Published: Mar 22, 2005 |