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2SC3852/3852A High hFE
LOW VCE (sat)
Silicon NPN Epitaxial Planar Transistor
sAbsolute maximum ratings (Ta=25°C)
Ratings
Symbol 2SC3852 2SC3852A
Unit
VCBO
80
100
V
VCEO
60
80
V
VEBO
6
V
IC
3
A
IB
1
A
PC
25(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
IEBO V(BR)CEO hFE VCE(sat) fT COB
VCB= VEB=6V IC=25mA VCE=4V, IC=0.5A IC=2A, IB=50mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(mA)
20
20
1.
C3852A Datasheet
