The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SC3857
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3857 200 200 6 15 5 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=5A IC=10A, IB=1A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 100max 100max 200min
External Dimensions MT-200
36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2
2SC3857
Unit
µA µA
V
a b
50min∗ 3.0max 20typ 250typ V MHz pF
20.0min
4.0max
2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.
2SC3857 Datasheet
