1N5817W Datasheet - Sangdest Microelectronics

1N5817W, SCHOTTKY BARRIER DIODE

Technical Data Data Sheet N1756, Rev.
- 1N5817W-1N5819W SCHOTTKY BARRIER DIODE

Features

* Metal silicon junction, majority carrier conduction
* Guarding for overvoltage protection
* Low power loss, high efficiency
* High current capability
* Low forward voltage drop
* High surge capability
* For use in low voltage, high frequency

Applications

* Mechanical Data:
* Case: SOD-123FL molded plastic body
* Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
* Polarity: Color band denotes cathode end
* Mounting Position: Any Mechanical Dimensions: In mm/Inches 1N5817W-1N5819W Green Products Symbol A

1N5817W-SangdestMicroelectronics.pdf