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SDS120J010G3 - SiC Schottky Barrier Diode

SDS120J010G3 Description

Datasheet SDS120J010G3 1200V/10A SiC Schottky Barrier Diode Characteristic * Zero Reverse Recovery Current * Positive temperature co.
VRRM 1200 V IF(135℃) 20. A QC 28. nC TO-247-3L Device SDS120J010G3 Package TO-247-3L Marking DS120010G3 Absolute Maximum Ra.

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Datasheet Details

Part number
SDS120J010G3
Manufacturer
Sanan
File Size
322.17 KB
Datasheet
SDS120J010G3-Sanan.pdf
Description
SiC Schottky Barrier Diode

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SiC Schottky Barrier Diode Sanan
Sanan SDS120J010G3-like datasheet